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october 1992 avionics applications rf & microwave transistors .280 4lsl (s051) epoxy sealed . refractory/gold metallization . emitter site ballasted . :1 vswr capability . low thermal resistance . input matching . overlay geometry . metal/ceramic hermetic package . p out = 35 w min. with 10.7 db gain description the MSC81035MP is a medium power class c transistor designed specifically for pulsed l-band avionics applications. this device is a direct re- placement for the msc1035mp. MSC81035MP of- fers improved saturated ouput power and collector efficiency based on the test circuit described herein. low rf thermal resistance and computerized auto- matic wire bonding techniques ensure high relia- bility and product consistency. the MSC81035MP is housed in the impac? pack- age with internal input matching. pin connection branding 81035mp order code MSC81035MP absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation* (t c 100?c) 150 w i c device current* 3.0 a v cc collector-supply voltage* 55 v t j junction temperature (pulsed rf operation) 250 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance* 1.0 c/w *applies only to rated rf amplifier operation note: thermal resistance determined by infra-red scanning of hot-spot junction temperature at rated rf operating conditions. MSC81035MP 1. collector 3. emitter 2. base 4. base thermal data 1/4
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1025 1150 mhz p in = 3.0w v cc = 50v 35 40 w h cf = 1025 1150 mhz p in = 3.0w v cc = 50v 10.7 11.2 % g p f = 1025 1150 mhz p in = 3.0w v cc = 50v 43 48 db note: pulse width = 10 m sec duty cycle = 1% static symbol test conditions value unit min. typ. max. bv cbo i c = 10ma i e = 0ma 65 v bv ebo i e = 1ma i c = 0ma 3.5 v bv cer ic = 10ma r be = 10 w 65 v i ces v be = 0v v ce = 50v 5 ma h fe v ce = 5v i c = 500ma 15 120 dynamic typical performance typical broadband power amplifier MSC81035MP 2/4
test circuit all dimensions are in inches. ref.: dwg. no. 101 002888 typical input impedance typical collector load impedance p in = 3.0 w v cc = 50 v normalized to 50 ohms z in l l z cl h m m h impedance data z in z cl freq. z in ( w )z cl ( w ) l = 1025 mhz 2.6 + j 8.3 7.7 + j 2.0 m = 1090 mhz 2.8 + j 8.7 7.1 + j 1.0 h = 1150 mhz 3.2 + j 4.4 6.5 - j 0.5 MSC81035MP 3/4
package mechanical data information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a MSC81035MP 4/4

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